Dr. Lu received his B.Sc. degree in 1999 from Tsinghua University (Beijing, China) and his Ph.D. degree in 2004 from Institute of Semiconductor (CAS, Beijing, China). He joined in the Université de Rennes I (Oct.2004–Jan.2006) and Unité Mixté de Physique CNRS/Thales (Feb. 2006–Dec.2007) for post-doctoral study in France. In 2008, he obtained the permanent position of CNRS (French national scientific research center) in Institute of Jean-Lamour (Nancy, France). In 2010, he has been invited in University of Maryland (College Park, USA) for one-year visiting research. Dr. Lu’s research interests are mainly focused on magnetic tunnel junction and spin injection and detection in semiconductor (GaAs, GaN, Si, Ge), 2D and organic materials. He has been coordinator or local principle for 5 ANR projects to develop semiconductor spintroncics based on GaAs, SiGe, 2D and organic materials. He has obtained a total budget of 2.9 M€ from different contracts. He is the author and co‐author of 90 articles in international peer-reviewed journals. He has served as referee for more than 80 articles in international peer-reviewed journals. Since 2021, he serves as an associate editor for Journal of Semiconductor (IOP publisher).
E-mail:
yuan.lu@univ-lorraine.fr
