Isabelle Sagnes received her Ph.D. in physics in 1994 on the electro-optical properties of epitaxial Si/SiGe heterostructures on silicon. She first joined CNET in Grenoble as a research engineer, working on 0.18µm CMOS technology. In 1998, she joined the CNRS and integrated its Laboratoire de Photonique et de Nanostructures (LPN, UPR 20), now the Centre de Nanoscience et de Nanotechnologies (C2N, UMR 9001 – CNRS Université Paris-Saclay). As a CNRS senior research scientist, she is the head of the MOVPE team of the C2N. Her research activities can be divided in two main categories:
- Complex heterostructures based on mature GaAs and InP technologies, mainly GaAs-based vertical external-cavity surface-emitting lasers (VECSEls) and for Quantum Cascade
- Devices (QCL, QCD, QWIP) based on the InGaAs/InAlAs system on InP for the 5-12µm range.
Emerging materials for photonics, including GaP for nonlinear photonics and (Si)GeSn for CMOS-compatible NIR/MIR emitters and detectors.